1n4001 thru 1n4007 document number 88503 25-aug-05 vishay general semiconductor www.vishay.com 1 do-204al (do-41) general purpose plastic rectifier major ratings and characteristics i f(av) 1.0 a v rrm 50 v to 1000 v i fsm 30 a v f 1.1 v i r 5.0 a t j max. 150 c features ? low forward voltage drop ? low leakage current ? high forward surge capability ? solder dip 260 c, 40 seconds typical applications for use in general purpose rectification of power sup- plies, inverters, converters and freewheeling diodes application. (note: these devices are not q101 qualified. there- fore, the devices specified in this datasheet have not been designed for use in automotive or hi-rel appli- cations.) mechanical data case: do-204al, molded epoxy body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated (e3 suffix) leads, solderable per j-std-002b and jesd22-b102d polarity: color band denotes cathode end maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 unit maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current 0.375" (9.5 mm) lead length at t a = 75 c i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 30 a maximum full load revers e current, full cycle average 0.375" (9.5 mm) lead length t l = 75 c i r(av) 30 a operating junction and storage temperature range t j , t stg - 50 to + 150 c
www.vishay.com 2 document number 88503 25-aug-05 1n4001 thru 1n4007 vishay general semiconductor electrical characteristics (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) notes: (1) thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, p.c.b. mounted ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 unit maximum instantaneous forward voltage at 1.0 a v f 1.1 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 125 c i r 5.0 50 a typical junction capacitance at 4.0 v, 1 mhz c j 15 pf parameter symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 unit typical thermal resistance(1) r ja r jl 50 25 c/w figure 1. forward current derating curve 0 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0. 8 1.0 60 hz resisti v e or ind u cti v e load 0.2 x 0.2? (5.0 x 5.0 mm) copper pads 0.375? (9.5 mm) lead length j u nction temperat u re (c) a v erage for w ard rect ified c u rrent ( a) figure 2. maximum non-repetitive peak forward surge current 5.0 10 15 20 25 30 t a = 75 c 8 .3 ms single half sine- w a v e peak for w ard s u rge c u rrent (a) nu m b er of cycles at 60 hz 1 10 100
1n4001 thru 1n4007 document number 88503 25-aug-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 0.01 0.1 1 10 20 t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle instantaneo u s for w ard v oltage ( v ) instan taneo u s fo r w ard c u rrent (a) 0 0.01 0.1 1 10 100 60 8 0 100 20 40 1000 t j = 150 c t j = 100 c t j = 25 c percentage of peak re v erse v oltage (%) instan taneo u s re v erse c u rrent ( a) figure 5. typical junction capacitance figure 6. typical trans ient thermal impedance 1 10 100 t j = 25 c f = 1.0 mhz v sig = 50m v p-p re v erse v oltage ( v ) j u nction capa citance (pf) 0.1 1 10 100 0.1 10 100 1 t-p u lse d u ration (sec.) transient thermal impedance (c/ w ) 0.01 0.1 1 10 100 0.107 (2.7) 0.0 8 0 (2.0) 0.034 (0. 8 6) 0.02 8 (0.71) dia. 1.0 (25.4) mi n . 1.0 (25.4) mi n . 0.205 (5.2) 0.160 (4.1) dia. do-204al (do-41) n ote: lead diameter is for s u ffix ?e? part n u m b ers 0.026 (0.66) 0.023 (0.5 8 )
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